Scanning Capacitance Microscopy Service

Scanning Capacitance Microscopy Service

With the SCM technique, it has the advantages of differentiating dopant type and two-dimensional device doping delineation with nanometer resolution. Hence, SCM is helpful in device failure analysis and reverse engineering.

Alternative ways to observe doping profiles in silicon substrates include the techniques of chemical etching combined with Scanning Electron Microscopy (SEM), Spreading Resistance Probe (SRP), and Secondary Ion Mass Spectrometry (SIMS). For SIMS and SRP, their lateral resolutions are usually insufficient to locate the failure site exactly. Based on chemical etching on doped region, two-dimensional delineation of dopants in silicon can be observed with SEM. However, it is hard to control the chemical etching rate to get reliable and repeatable images with this technique.

Based on the superior spatial resolution of Scanning Probe Microscopy, the lateral resolution of Scanning Capacitance Microscopy (SCM) is able to reach to 20nm. In SCM measurement, AC voltage is applied to samples. The dC/dV signal obtained by SCM could be transferred to two-dimensional doping distribution, differentiating dopant type and P-N junction delineation.


  • Dopant type analysis
  • P-N junction delineation
  • Front-end failure/leakage analysis
  • Dopant distribution for reverse engineering